A. Shik, H.E. Ruda, D.E. Pelinovsky, and W. Craig
Depletion layers and contact capacitance in
non-uniformly doped semiconductors,
J. Phys. D: Appl. Phys. 35, 2988-2993 (2002)
We consider the dependence of the capacitance C of the semiconductor
depletion layer versus the voltage bias V of the substrate metallic contact.
When the concentration of
doping impurities varies in the plane parallel to the contact, we show that
the standard Schottky dependence C-2(V) is no longer a straight line
but has a sublinear character. We compute the effective concentration
Neff from the slope of the dependence C-2(V)
by using the
perturbation and variation methods and compare Neff
theoretical and experimental data.
SEMICONDUCTORS, DEPLETION LAYERS, CAPACITANCE, CONCENTRATION--VOLTAGE CHARACTERISTICS,
PERTURBATION SERIES METHODS, VARIATIONAL METHODS